Yıl 2018, Cilt 22, Sayı 3, Sayfalar 915 - 921 2018-06-01

Effects of interface states and series resistance on the electrical characteristic of Sc2O3 MOS capacitor
Ara yüzey seviyelerinin ve seri direncin Sc2O3 MOS kapasitörünün elektriksel karakteristiği üzerine etkisi

Ayşegül Kahraman [1] , Ercan Yılmaz [2]

84 172

The purpose of this study is to examine the effects of interface states and series resistance (Rs) on the electrical characteristic of Sc2O3 (Scandium oxide) MOS (Metal Oixde Semiconductor) capacitor depending on frequency. Sc2O3 MOS capacitor was produced on p type Si (100) with RF magnetron sputtering. Capacitance-voltage (C-V) and Conductance-voltage (G/ω-V) variations of the capacitor were measured in six different frequencies ranging from 50 kHz to 1 MHz. The obtained results showed that the capacitance values in the accumulation region of the C-V curve were lower than expected due to the Rs effect. The peaks were not clearly formed due to this effect in the G/ω-V characteristics. For this reason, the effect of trap charges on the electrical characteristics of the Sc2O3/Si interface was investigated after Rs correction applied to the experimental results. The interface trap-charges contributed to the measured capacitance with decreasing frequency by following the AC voltage signal. The carrier concentration for p type Si (Na), barrier height (ΦB), and energy difference between the bulk Fermi level and valance band edge (EF) values were calculated by using corrected C-V and G/ω-V measurements. 

 

Bu çalışmanın amacı, ara yüzey seviyelerinin ve seri direcin (Rs) Sc2O3 (Skandiyum oksit) MOS (Metal Oksit Yarıiletken) kapasitörünün elektriksel karakteristiği üzerine etkisini frekansa bağlı olarak incelemektir. Sc2O3 MOS kapasitörü RF magnetron saçtırma sistemi ile p tipi Si (100) üzerine üretilmiştir. Kapasitörün kapasitans-voltaj (C-V) ve iletkenlik-voltaj (G/ω-V) değişimleri, 50 kHz ile 1 MHz arasında değişen altı farklı frekansta ölçülmüştür. Elde edilen sonuçlar, C-V eğrisinin yığılım bölgesinde kapasitans değerlerinin Rs etkisi nedeniyle beklenenden daha düşük olduğunu göstermiştir. G/ω-V karakteristiklerinde ise bu etki nedeniyle pikler belirgin bir şekilde oluşmamıştır. Bu nedenle, ölçüm sonuçlarına Rs düzeltmesi yapıldıktan sonra, Sc2O3/Si ara yüzeyinde oluşan tuzak yüklerinin elektriksel karakteristik üzerine etkisi incelenmiştir. Frekansın azalmasıyla birlikte ara yüzey tuzak yükleri, AC voltaj sinyalini takip ederek ölçülen kapasitansa katkı sağlamışlardır. Düzeltilmiş C-V ve G/ω-V ölçümlerinden yararlanılarak p tipi Si için taşıyıcı konsantrasyonu (Na), bariyer yüksekliği (ΦB) ve Fermi seviyesi - değerlik bandı arasındaki enerji farkı (EF) değerleri hesaplanmıştır.


The purpose of this study is to examine the effects of interface states and series resistance (Rs) on the electrical characteristic of Sc2O3 (Scandium oxide) MOS (Metal Oixde Semiconductor) capacitor depending on frequency. Sc2O3 MOS capacitor was produced on p type Si (100) with RF magnetron sputtering. Capacitance-voltage (C-V) and Conductance-voltage (G/ω-V) variations of the capacitor were measured in six different frequencies ranging from 50 kHz to 1 MHz. The obtained results showed that the capacitance values in the accumulation region of the C-V curve were lower than expected due to the Rs effect. The peaks were not clearly formed due to this effect in the G/ω-V characteristics. For this reason, the effect of trap charges on the electrical characteristics of the Sc2O3/Si interface was investigated after Rs correction applied to the experimental results. The interface trap-charges contributed to the measured capacitance with decreasing frequency by following the AC voltage signal. The carrier concentration for p type Si (Na), barrier height (ΦB), and energy difference between the bulk Fermi level and valance band edge (EF) values were calculated by using corrected C-V and G/ω-V measurements.

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Birincil Dil tr
Konular Fizik ve Fizik Mühendisliği, Malzeme Bilimi
Yayımlanma Tarihi Haziran 2018
Dergi Bölümü Araştırma Makalesi
Yazarlar

Yazar: Ayşegül Kahraman
Kurum: Uludağ Üniversitesi Fen Edebiyat Fakültesi Fizik Bölümü
Ülke: Turkey


Yazar: Ercan Yılmaz
Kurum: Abant İzzet Baysal Üniversitesi Nükleer Radyasyon Dedektörleri Uygulama ve Araştırma Merkezi
Ülke: Turkey


Bibtex @araştırma makalesi { saufenbilder327593, journal = {Sakarya University Journal of Science}, issn = {1301-4048}, eissn = {2147-835X}, address = {Sakarya Üniversitesi}, year = {2018}, volume = {22}, pages = {915 - 921}, doi = {10.16984/saufenbilder.327593}, title = {Ara yüzey seviyelerinin ve seri direncin Sc2O3 MOS kapasitörünün elektriksel karakteristiği üzerine etkisi}, key = {cite}, author = {Yılmaz, Ercan and Kahraman, Ayşegül} }
APA Kahraman, A , Yılmaz, E . (2018). Ara yüzey seviyelerinin ve seri direncin Sc2O3 MOS kapasitörünün elektriksel karakteristiği üzerine etkisi. Sakarya University Journal of Science, 22 (3), 915-921. DOI: 10.16984/saufenbilder.327593
MLA Kahraman, A , Yılmaz, E . "Ara yüzey seviyelerinin ve seri direncin Sc2O3 MOS kapasitörünün elektriksel karakteristiği üzerine etkisi". Sakarya University Journal of Science 22 (2018): 915-921 <http://www.saujs.sakarya.edu.tr/issue/30828/327593>
Chicago Kahraman, A , Yılmaz, E . "Ara yüzey seviyelerinin ve seri direncin Sc2O3 MOS kapasitörünün elektriksel karakteristiği üzerine etkisi". Sakarya University Journal of Science 22 (2018): 915-921
RIS TY - JOUR T1 - Ara yüzey seviyelerinin ve seri direncin Sc2O3 MOS kapasitörünün elektriksel karakteristiği üzerine etkisi AU - Ayşegül Kahraman , Ercan Yılmaz Y1 - 2018 PY - 2018 N1 - doi: 10.16984/saufenbilder.327593 DO - 10.16984/saufenbilder.327593 T2 - Sakarya University Journal of Science JF - Journal JO - JOR SP - 915 EP - 921 VL - 22 IS - 3 SN - 1301-4048-2147-835X M3 - doi: 10.16984/saufenbilder.327593 UR - http://dx.doi.org/10.16984/saufenbilder.327593 Y2 - 2018 ER -
EndNote %0 Sakarya University Journal of Science Ara yüzey seviyelerinin ve seri direncin Sc2O3 MOS kapasitörünün elektriksel karakteristiği üzerine etkisi %A Ayşegül Kahraman , Ercan Yılmaz %T Ara yüzey seviyelerinin ve seri direncin Sc2O3 MOS kapasitörünün elektriksel karakteristiği üzerine etkisi %D 2018 %J Sakarya University Journal of Science %P 1301-4048-2147-835X %V 22 %N 3 %R doi: 10.16984/saufenbilder.327593 %U 10.16984/saufenbilder.327593
ISNAD Kahraman, Ayşegül , Yılmaz, Ercan . "Ara yüzey seviyelerinin ve seri direncin Sc2O3 MOS kapasitörünün elektriksel karakteristiği üzerine etkisi". Sakarya University Journal of Science 22 / 3 (Haziran 2018): 915-921. http://dx.doi.org/10.16984/saufenbilder.327593